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  60612 tkim tb-00000906, ta-4180/10904tn (kt)/92098ha (kt)/8259mo/4137ki/4076ki, ts no.2112-1/10 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sb1201/2SD1801 bipolar transistor (?) 50v, (?) 2a, low v ce ( sat ) , ( pnp ) npn single tp/tp-fa applications ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of fbet, mbit processes ? large current capacitance and wide aso ? low collector-to-emitter saturation voltage ? fast switching speed ? small and slim package making it easy to make 2sb1201/2SD1801-used sets smaller speci cations ( ): 2sb1201 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)4 a continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : en2112c product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s c-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp-fa 2sb1201s-e 2sb1201t-e 2SD1801s-e 2SD1801t-e 2sb1201s-tl-e 2sb1201t-tl-e 2SD1801s-tl-e 2SD1801t-tl-e b1201 d1801 lot no. rank lot no. rank 2,4 3 1 2SD1801 2,4 3 1 2sb1201
2sb1201 / 2SD1801 no.2112-2/10 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 0.8 w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)50v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)1.5a 40 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (22)12 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma (--0.3)0.15 (--0.7)0.4 v base-to-emitter saturation voltage v be (sat) v ce =(--)1a, i c =(--)50ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. 60 ns storage time t stg (450)550 ns fall time t f 30 ns * : the 2sb1201/2SD1801 are classi ed by 100ma h fe as follows : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 switching time test circuit ordering information device package shipping memo 2sb1201s-e tp 500pcs./bag pb free 2sb1201t-e tp 500pcs./bag 2SD1801s-e tp 500pcs./bag 2SD1801t-e tp 500pcs./bag 2sb1201s-tl-e tp-fa 700pcs./reel 2sb1201t-tl-e tp-fa 700pcs./reel 2SD1801s-tl-e tp-fa 700pcs./reel 2SD1801t-tl-e tp-fa 700pcs./reel v r r b v cc =25v v be = --5v + + 50 input r l 25 output 100 f 470 f pw=20 s i b1 d.c. b 1% i b2 i c =10i b1 = --10i b2 =500ma, v cc =25v for pnp, the polarity is reversed. stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sb1201 / 2SD1801 no.2112-3/10 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe --2.4 --1.6 --1.2 --0.8 --0.4 --2.0 0 0 --0.4 --0.8 --2.4 --2.0 --1.6 --1.2 itr09144 itr09145 2.4 1.6 1.2 0.8 0.4 2.0 0 0 0.4 0.8 2.4 2.0 1.6 1.2 --50ma --20ma i b =0 --10ma --2ma --8ma --6ma --4ma 2sb1201 i b =0 2ma 15ma 25ma 40ma 50ma 4ma 8ma 2SD1801 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --1.6 --1.2 --2.4 --2.0 --0.8 --0.4 0 itr09148 ta=75 c 25 c --25 c 2sb1201 v ce = --2v itr09149 2 3 5 7 7 1000 2 3 5 100 23 5 57 7 7 --0.01 --0.1 23 5 23 --1.0 itr09150 2sb1201 v ce = --2v ta=75 c 25 c --25 c itr09151 0 0.2 0.4 0.6 0.8 1.2 1.0 1.6 1.2 2.4 2.0 0.8 0.4 0 ta=75 c 25 c --25 c 2SD1801 v ce =2v --1200 --800 --600 --400 --200 --1000 0 0 --2 --4 --12 --10 -- 8 -- 6 i b =0 itr09146 2sb1201 --7ma -- 6 m a --5ma --4ma --3ma -- 2 m a -- 1 m a itr09147 1200 800 600 400 200 1000 0 024 12 10 8 6 2SD1801 i b =0 7ma 6ma 5ma 4ma 3ma 2ma 1ma 2 3 5 7 7 1000 2 3 5 100 23 5 57 7 7 0.01 0.1 23 5 23 1.0 ta=75 c 25 c -- 2 5 c 2SD1801 v ce =2v
2sb1201 / 2SD1801 no.2112-4/10 v ce (sat) -- i c collector current, i c -- a v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a 23 --100 --10 23 5 23 57 7 --1000 1000 10 7 5 2 3 100 7 5 2 3 itr09152 2sb1201 v cb =10v 23 100 10 23 5 23 57 7 1000 1000 10 7 5 2 3 100 7 5 2 3 itr09153 2SD1801 v cb =10v 5 7 7 3 2 5 3 --1.0 --10 57 7 7 --0.01 23 23 5 23 5 --0.1 --1.0 itr09158 2sb1201 i c / i b =20 25 c 75 c ta= --25 c 5 7 7 3 2 5 3 1.0 10 57 7 7 0.01 23 23 5 23 5 0.1 1.0 25 c 75 c ta= --25 c itr09159 2SD1801 i c / i b =20 --1.0 --10 7 3 5 7 5 100 10 2 2 27 35 --100 27 35 itr09154 2 5 7 7 3 2 5 3 --1000 --10 --100 23 57 7 7 5 --0.01 23 5 3 --0.1 2 --1.0 itr09156 2sb1201 i c / i b =20 25 c ta=75 c --25 c 2 5 7 7 3 2 5 3 1000 10 100 23 57 7 7 5 0.01 23 5 3 0.1 2 1.0 itr09157 2SD1801 i c / i b =20 25 c ta=75 c --25 c 2sb1201 f=1mhz 1.0 10 7 3 5 7 5 100 10 2 27 35 100 27 35 itr09155 2SD1801 f=1mhz
2sb1201 / 2SD1801 no.2112-5/10 a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c p c -- ta 1.0 0.1 0.01 5 3 2 5 3 5 7 7 3 2 2 1.0 10 2 2577 3 3 100 25 3 5 itr09160 0 16 12 15 14 8 10 6 4 0.8 2 0 20 40 60 100 120 140 160 80 itr09161 2sb1201 / 2SD1801 100ms 10ms 1ms dc operation tc=25 c dc operation ta=25 c tc=25 c single pulse for pnp, the minus sign is omitted. no heat sink ideal heat dissipation 2sb1201 / 2SD1801
2sb1201 / 2SD1801 no.2112-6/10 taping speci cation 2sb1201s-tl-e, 2sb1201t-tl-e, 2SD1801s-tl-e, 2SD1801t-tl-e
2sb1201 / 2SD1801 no.2112-7/10 outline drawing land pattern example 2sb1201s-tl-e, 2sb1201t-tl-e, 2SD1801s-tl-e, 2SD1801t-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sb1201 / 2SD1801 no.2112-8/10 bag packing speci cation 2sb1201s-e, 2sb1201t-e, 2SD1801s-e, 2SD1801t-e
2sb1201 / 2SD1801 no.2112-9/10 outline drawing 2sb1201s-e, 2sb1201t-e, 2SD1801s-e, 2SD1801t-e mass (g) unit 0.315 * for reference mm
2sb1201 / 2SD1801 ps no.2112-10/10 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.


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